View IRL1404L_342155.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 93854A
Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l
HEXFET(R) Power MOSFET
D
IRL1404S IRL1404L
VDSS = 40V
G S
RDS(on) = 0.004 ID = 160A
Seventh Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL1404L) is available for lowprofile applications.
D2Pak IRL1404S
TO-262 IRL1404L
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
160 110 640 3.8 200 1.3 20 520 95 20 5.0 -55 to + 175 300 (1.6mm from case)
Units
A W W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient (PCB Mounted)
Typ.
--- 0.50 ---
Max.
0.75 --- 40
Units
C/W
www.irf.com
1
02/22/02
IRL1404S/IRL1404L
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff.
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units Conditions 40 --- --- V VGS = 0V, I D = 250A --- 0.038 --- V/C Reference to 25C, D = 1mA --- --- 0.004 VGS = 10V, ID = 95A 0.0059 VGS = 4.3V, ID = 40A 1.0 --- 3.0 V VDS = VGS, ID = 250A 93 --- --- S VDS = 25V, ID = 95A --- --- 20 VDS = 40V, VGS = 0V A --- --- 250 VDS = 32V, VGS = 0V, TJ = 150C --- --- 200 VGS = 20V nA --- --- -200 VGS = -20V --- --- 140 ID = 95A --- --- 48 nC VDS = 32V --- --- 60 VGS = 5.0V, See Fig. 6 --- 18 --- VDD = 20V ns --- 270 --- ID = 95A --- 38 --- RG = 2.5 VGS = 4.5V --- 130 --- RD = 0.25 D Between lead, 4.5 --- nH --- 6mm (0.25in.) G from package 7.5 --- --- and center of die contact S --- 6600 --- VGS = 0V --- 1700 --- pF VDS = 25V --- 350 --- = 1.0MHz, See Fig. 5 --- 6700 --- VGS = 0V, V DS = 1.0V, = 1.0MHz --- 1500 --- VGS = 0V, VDS = 32V, = 1.0MHz --- 1500 --- VGS = 0V, VDS = 0V to 32V
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- 160 showing the A G integral reverse --- --- 640 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 95A, VGS = 0V --- 63 94 ns TJ = 25C, IF = 95A --- 170 250 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRL1404S/IRL1404L
1000
I D , Drain-to-Source Current (A)
4.3V
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.3V TOP
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.3V TOP
4.3V
100
100
10 0.1
20s PULSE WIDTH T = 25 C
J 1 10 100
10 0.1
20s PULSE WIDTH T = 175 C
J 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
TJ = 25 C TJ = 175 C
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 160A
I D , Drain-to-Source Current (A)
2.0
1.5
1.0
0.5
100 4.0
V DS = 15V 20s PULSE WIDTH 7.0 5.0 6.0 8.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
IRL1404S/IRL1404L
10000
VGS , Gate-to-Source Voltage (V)
8000
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 95A
16
VDS = 32V VDS = 20V
C, Capacitance (pF)
Ciss
6000
12
4000
8
2000
C oss C rss
1 10 100
4
0
0 0 100 200
FOR TEST CIRCUIT SEE FIGURE 13
300 400 500
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
10000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R
DS(on)
100
TJ = 175 C
I D , Drain Current (A)
1000
10us
100us 1ms
10
TJ = 25 C
100
1 0.0
V GS = 0 V
0.5 1.0 1.5 2.0 2.5 3.0
10
TC = 25 C TJ = 175 C Single Pulse
1 10
10ms
100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRL1404S/IRL1404L
160
PACKAGE LIMITED BY
VGS
120
VDS
RD
D.U.T.
+
I D , Drain Current (A)
RG
-VDD
10V
80
Pulse Width 1 s Duty Factor 0.1 %
40
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature
( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
1 D = 0.50
Thermal Response (Z thJC )
0.20 0.1 0.10 0.05 0.02 0.01
0.01
SINGLE PULSE (THERMAL RESPONSE)
0.001 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01
PDM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRL1404S/IRL1404L
1 5V
EAS , Single Pulse Avalanche Energy (mJ)
1200
1000
VDS
L
D R IV E R
TOP BOTTOM ID 39A 67A 95A
800
RG
20V tp
D .U .T
IA S
+ V - DD
A
600
0 .0 1
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS tp
400
200
0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature( C)
IAS
Fig 12b. Unclamped Inductive Waveforms
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
QG
Current Regulator Same Type as D.U.T.
10 V
QGS VG QGD
12V .2F
50K .3F
D.U.T. VGS
3mA
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
www.irf.com
IRL1404S/IRL1404L
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
+
-
+
RG VGS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ VDD
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET(R) power MOSFETs
www.irf.com
7
IRL1404S/IRL1404L
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A2
4.69 (.1 85) 4.20 (.1 65)
-B 1.3 2 (.05 2) 1.2 2 (.04 8)
1 0.16 (.4 00 ) RE F.
6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 5 .28 (.20 8) 4 .78 (.18 8) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 8.8 9 (.3 50 ) R E F.
1.7 8 (.07 0) 1.2 7 (.05 0)
1
3
3X
1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0)
0 .93 (.03 7 ) 3X 0 .69 (.02 7 ) 0 .25 (.01 0 ) M BAM
0.5 5 (.022 ) 0.4 6 (.018 )
M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 )
NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E
8.89 (.3 50 ) 17 .78 (.70 0)
3 .8 1 (.15 0) 2 .08 (.08 2) 2X 2.5 4 (.100 ) 2X
D2Pak Part Marking Information
THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L"
INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE
PART NUMBER F530S DATE CODE YEAR 0 = 2000 WEEK 02 LINE L
8
www.irf.com
IRL1404S/IRL1404L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C"
INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE
PART NUMBER
DATE CODE YEAR 7 = 1997 WEEK 19 LINE C
www.irf.com
9
IRL1404S/IRL1404L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR R
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 ( .16 1 ) 3 .9 0 ( .15 3 )
1.6 0 ( .06 3) 1.5 0 ( .05 9) 0 .3 6 8 (.0 14 5) 0 .3 4 2 (.0 13 5)
F EED D IRE CTION 1 .8 5 ( .0 73 )
1 .6 5 ( .0 65 )
11 .60 (.4 57 ) 11 .40 (.4 49 )
15 .42 (.6 09 ) 15 .22 (.6 01 )
24 .30 (.9 57 ) 23 .90 (.9 41 )
TRL
1 0.9 0 (. 42 9) 1 0.7 0 (. 42 1) 1.7 5 ( .06 9) 1.2 5 ( .04 9) 16 .10 (.6 34 ) 15 .90 (.6 26 ) 4.7 2 (.1 36 ) 4.5 2 (.1 78 )
FE ED D IRE CT ION
13 .50 ( .532) 12 .80 ( .504)
27.40 (1 .079) 23.90 (.9 41)
4
330 .00 (14.173) MA X.
60.00 (2 .362) M IN .
N OTES : 1. C O M F O R M S T O E IA - 418. 2. C O N T R O LLIN G D IM E N S IO N : M ILLIM E T ER . 3. D IM E N S IO N M E A S U R E D @ H U B . 4. IN C LU D E S F LA N G E D IS T O R T IO N @ O U T E R E D G E .
2 6.40 (1.03 9) 2 4.40 (.961 )
3 0.40 (1.197) MAX. 4
3
Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 0.35mH RG = 25, I AS = 95A. (See Figure 12) ISD 95A, di/dt 160A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%.
Calculated continuous current based on maximum allowable junction temperature; for recommended current-handing of the package refer to Design Tip # 93-4. This is applied to D2Pak, When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/02
10
www.irf.com

▲Up To Search▲

Price & Availability of IRL1404L

	To Download IRL1404L Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .